NTAG 213F / 216F
The NXP NTAG 213F / 216F is an NFC tag IC, with NTAG213F: 144 bytes user memory (180 bytes total EEPROM, 45 pages × 4 bytes); NTAG216F: 888 bytes user memory (924 bytes total EEPROM, 231 pages × 4 bytes), operating at 13.56 MHz, under ISO/IEC 14443 Type A NFC Forum Type 2 Tag compliant.
NTAG21x with field-detection pin output
Full Specifications
| Manufacturer | NXP |
|---|---|
| Frequency Category | NFC |
| Frequency | 13.56 MHz |
| Protocol | ISO/IEC 14443 Type A, NFC Forum Type 2 Tag compliant |
| Memory | NTAG213F: 144 bytes user memory (180 bytes total EEPROM, 45 pages × 4 bytes); NTAG216F: 888 bytes user memory (924 bytes total EEPROM, 231 pages × 4 bytes) |
| Interface | RF contactless interface, Field Detection pin (FD) with open-drain output |
| Temperature Range | -25°C to +70°C ambient operating temperature |
| Form Factor | HXSON4 package (2.0 × 1.5 × 0.5 mm, 4 terminals) |
| Security | ECC-based originality signature, 32-bit password protection with configurable access control, field-programmable read-only locking per page, 7-byte UID |
Engineering Brief
The NTAG213F and NTAG216F are NFC Forum Type 2 compliant ICs operating at 13.56 MHz with 144 or 888 bytes of user memory respectively. They feature an innovative field-detection pin with configurable triggers (RF presence, start-of-frame, or tag selection) enabling microcontroller wake-up, plus a SLEEP mode for privacy control. Additional features include FAST_READ command for reduced overhead, ECC-based originality signature for authentication, ASCII mirroring of UID and NFC counter for dynamic NDEF messages, and 32-bit password protection with optional attempt limiting. The HXSON4 package maintains pin compatibility with NTAG203F while offering 50 pF input capacitance and 106 kbit/s data rate.
Typical Applications
Standards & Compliance
Frequently Asked Questions
What is the difference between NTAG213F and NTAG216F memory capacity?
NTAG213F provides 144 bytes of user memory (180 bytes total), while NTAG216F offers 888 bytes of user memory (924 bytes total). Both organize memory in 4-byte pages (45 and 231 pages respectively).
What is the field detection pin on NTAG213F and NTAG216F used for?
The field detection (FD) pin is an open-drain output that can trigger on RF field presence, start-of-frame, or tag selection events. It enables microcontroller wake-up in battery-powered applications, reducing power consumption when no NFC field is present.
How does ECC-based originality signature work on NTAG21xF chips?
The NTAG213F and 216F include an ECC-based cryptographic signature that enables authentication of tag genuineness. This feature helps protect against counterfeiting in brand protection applications by allowing verification that the tag is an original NXP product.
Does NTAG216F support password protection?
Yes, both NTAG213F and 216F feature 32-bit password protection with configurable access control. The password can include optional attempt limiting to prevent brute-force attacks, and supports read/write access restrictions.
What is the SLEEP mode on NTAG213F and NTAG216F?
SLEEP mode is a privacy feature that allows the tag to be temporarily disabled and unresponsive to reader commands. This prevents unauthorized scanning until the tag is reactivated, providing user control over data accessibility.
Can NTAG216F create dynamic NFC NDEF messages?
Yes, both NTAG213F and 216F support ASCII mirroring of the 7-byte UID and NFC read counter into user memory. This enables automatic creation of dynamic NDEF messages, useful for tap counters, unique URLs, and anti-cloning applications.
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Cross-manufacturer alternatives
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